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Archive for the ‘Break IC’ Category

Decapsulate ARM MCU package and extract ARM Chip locked memory content from ARM MCU memory needs to get access to databus of ARM MCU by cracking MCU fuse;

Decapsulate ARM MCU package and extract ARM Chip locked memory content from ARM MCU memory needs to get access to databus of ARM MCU by cracking MCU fuse

Another phenomenon which helps with this is overerasing. If the erase cycle is applied to an already-erased cell, it leaves the floating gate positively charged, thus turning the memory transistor into a depletion-mode transistor. To avoid this problem, some devices, for example Intel’s original ETOX devices, first program all cells to 0’s before erasing them to 1’s. In later devices this problem was solved by redesigning the cell to avoid excessive overerasing, however even with this protection there is still a noticeable threshold shift when a virgin cell is programmed and erased.

Extract ARM IC Embeded Program from ARM Microcontroller memory, crack ARM microprocessor security fuse bit by focus ion beam and readout the code from MCU;

Extract ARM IC Embeded Program from ARM Microcontroller memory, crack ARM microprocessor security fuse bit by focus ion beam and readout the code from MCU

The amount of trapped charge can be detected by measuring the gate-induced drain leakage current of the cell, or its effect can be observed indirectly by measuring the threshold voltage of the cell. In older devices, which had the reference voltage for the sense amplifier tied to the device supply voltage, it was often possible to do this by varying the device supply voltage. In newer devices, it is necessary to change the parameters of the reference cell used in the IC firmware reverse engineering process, either by re-wiring portions of the cell circuitry or by using undocumented test modes built into the device by manufacturers.

Extract ARM MCU IC Chip embedded firmware from program memory and data memory, unlock secured microcontroller by focus ion beam facilities and copy extracted code from open microprocessor;

Extract ARM MCU IC Chip embedded firmware from program memory and data memory, unlock secured microcontroller by focus ion beam facilities and copy extracted code from open microprocessor;

There are two basic processes that allow placing the electrons on the floating gate – Fowler-Nordheim tunnelling and channel hot electron (CHE) injection. Both processes are destructive to the very thin dielectric between the floating gate and the channel of a transistor.

As a result, the number of possible cycles is limited because the floating gate slowly accumulates electrons, causing a gradual increase in the storage transistor’s threshold voltage and programming time. After a certain amount of program/erase cycles (typical values were represented in Table 1) it is no longer possible to erase or program the cell. Another negative effect (which is the main restoring failure mode for Flash memory) is negative charge trapping in the gate oxide. It inhibits CHE injection and tunnelling, changes the write and erase times of the cell, and shifts its threshold voltage.

Extract FPGA Chip encrypted firmware from secured flash memory and ROM memory, the format will be binary or heximal which can be readout directly by universal programmer after unlock FPGA chip;

Extract FPGA Chip encrypted firmware from secured flash memory and ROM memory, the format will be binary or heximal which can be readout directly by universal programmer after unlock FPGA chip;

Unlike SRAM which has only two stable logic states, EPROM, EEPROM and Flash cells actually store analog values in the form of a charge on the floating gate of a MOS transistor. The floating-gate charge shifts the threshold voltage of the cell transistor and this is detected with a sense amplifier when the cell is read. The maximum charge the floating gate can accumulate varies from one technology to another and normally is between 103 and 105 electrons. For standard 5 V EEPROM cell, programming causes about a 3.5 V shift in the threshold level. Some modern Flash memory devices employ multiple level detection against IC flash copying, thus increasing the capacity of the memory. There are also memory devices with full analog design which store charge proportional to the input voltage.

Restore IC Chip Embeded Information from program memory and data memory, the type of IC include MCU, AVR, PLD, CPLD and FPGA chip with the format of heximal which can be readout from Microcontroller memory;

Restore IC Chip Embeded Information from program memory and data memory, the type of IC include MCU, AVR, PLD, CPLD and FPGA chip with the format of heximal which can be readout from Microcontroller memory;

Another important thing to keep in mind is that security information inside PIC18F2550 could be restored even if part of the memory is corrupted. Suppose an attacker has correctly restored only m = 115 bits of an n = 128 bits long secure key, or 90% of the information. Then he will have to search through n!/(m!(n–m)!) = 128!/(115!13!) = 2.12·1017 ~ 258 possible keys. Having 10,000 computers, each performing 1 billion key-search operations per second, the attacker will spend only 6 hours to search through all possible keys.

If only 80% of information or 103 bits of a 128-bit secure key are known, than an attacker will need 2.51·1026 ~ 288 tries. Having even 100 times the capability, the attacker will spend more than a million years searching for the key. So to be sure that symmetric 128-bit keys cannot be retrieved from memory, it should be left without power for the time necessary to corrupt 20% or more of the cells. If error correction for key data is used, this value should be increased correspondingly. In our experiments, we assumed that no error correction was used.

Winbond W79E201 Microcontroller Internal Memory Breaking

In order to carry out the Winbond W79E201 Microcontroller Internal Memory Breaking, engineer need to has the general idea about the security system as well as its protection mechanism in this Microcontroller, below we would like to introduce some features of it:

This bit is used to restrict the accessible region of the MOVC instruction. It can prevent the MOVC instruction in external program memory from  reading the internal program code.

When this bit  is set  to logic 0, a MOVC instruction in external program memory space will be able to access code only in  the external memory, not in the internal memory.

A MOVC instruction in internal program memory space will always be able to access the ROM data in both internal and external memory. If this bit is logic 1, there are no restrictions on the MOVC instruction.

This bit is used to enable/disable the encryption logic for code protection. Once encryption feature is enabled, the data presented on port 0 will be encoded via encryption logic. Only whole chip erase will reset this bit before Winbond W79E201 Microcontroller Internal Memory Breaking.

ABSOLUTE MAXIMUM RATINGS

Oscillator Control

W79E201 allow user to diminish the gain of on-chip  oscillator amplifier by using programmer to  set  the bit B7 of security register. Once B7 is set to 0, a  half of gain  will be decreased. Care must be  taken if user attempts to diminish the gain of oscillator amplifier, reducing a half of  gain  may improperly affect the external crystal operation at high frequency above 24 MHz. The value of R and C1,C2 may need some adjustment while running at lower gain.

Security engineers are interested in the period of time for which an SRAM device will retain data once the power has been removed. The reason for this is as follows. Many products do cryptographic and other security-related computations using secret keys or other variables that the equipment’s operator must not be able to read out or alter. The usual solution is for the secret data to be kept in volatile memory inside a tamper-sensing enclosure. On detection of a tampering event, the volatile memory chips are powered down or even shorted to ground. If the data retention time exceeds the time required by an opponent to open the device and power up the memory, then the protection mechanisms can be defeated.

In the 1980s, it was realised that low temperatures can increase the data retention time of SRAM to many seconds or even minutes. With the devices available at that time, it was found that increased data retention started about −20°C and increased as temperature fell further. Some devices are therefore designed with temperature sensors; any drop below −20°C is treated as a tampering event and results in immediate memory zeroisation. We set out to repeat this work. Our goal was to find whether the memory devices available in the year 2000 exhibit the same behaviour.

Quoted from “Semi-invasive attacks – A new approach to hardware security analysis” writen by Sergei P. Skorobogatov.

Winbond W78IE52 Microcontroller Protected Eeprom Breaking

If we can figure out the root of W78IE52 booting it will be easier for us to locate the security fuse and disable it, furthermore it can help us to find the databus of MCU then through microprobing to get the program out. By default, the W78IE52 boots from APROM program after a power on reset. On some occasions, user can force the W78E62B to boot from the LDROM program via following settings.

The possible situation that you need to enter F04KBOOT mode is when the APROM program can not run properly and device can not jump back to LDROM to execute in-system programming function. Then you can use this F04KBOOT mode to force the W78IE52 jumps to LDROM and excutes in-system programming procedure.

F04KBOOT MODE

When you design your system, you may reserve the pins P2.6, P2.7 to switches or jumpers. For example in a CD-ROM system, you can connect the P2.6 and P2.7 to PLAY and EJECT buttons on the panel. When the APROM program fails to execute the normal application program.

User can press both two buttons at the same time and then turn on the power of the personal computer to force the W78IE52 to enter the F04KBOOT mode. After power on of personal computer, you can release both buttons and finish the in-system programming procedure to update the APROM code from Winbond W78IE52 Microcontroller Protected Eeprom Breaking.

In application system design, user must take care of the P2, P3, ALE, EA and PSEN pin value at reset to prevent from accidentally activating the programming mode or F04KBOOT mode.

Data Remanence IC Crack is a method to readout memory content from microcontroller embedded memory which include the program from flash and data from eeprom, the status of MCU can be reset through Focus ion beam tehcnique which is the most commonly used method for Microcontroller unlocking;

Data Remanence IC Crack is a method to recover memory content from microcontroller embedded memory which include the program from flash and data from eeprom, the status of MCU can be reset through Focus ion beam tehcnique which is the most commonly used method for Microcontroller unlocking

Security processors typically store secret key material in Static RAM, from which power is removed if the device is tampered with. It is widely known that, at temperatures below −20°C, the contents of SRAM can be ‘frozen’; therefore, many devices treat temperatures below this threshold as tampering events. We have done some experiments to establish the temperature dependency of data retention time in modern SRAM devices. Our experiments show that the conventional wisdom no longer holds and that data remanence can be a problem even at higher temperatures.

Data remanence affects not only SRAM but other memory types as well, like DRAM, UV EPROM, EEPROM and Flash. As a result, some information still can be extracted from MCU memory code that has been erased. This could create many problems for secure devices which assume that all the sensitive information is gone once the memory is erased.

Break Winbond W78E378 MCU Flash Memory

Timer manipulation can effectively decide the efficiency of Break Winbond W78E378 MCU Flash Memory,

Timers 0, 1, and 2 each consist of two 8-bit data registers. These are called TL0 and TH0 for Timer 0, TL1 and TH1 for Timer 1, and TL2 and TH2 for Timer 2. The TCON and TMOD registers provide  control functions for timers 0, 1. The T2CON register provides control functions for Timer 2. RCAP2H and RCAP2L are used as reload/capture registers for Timer 2.

The operations of Timer 0 and Timer 1 are the same as in the W78C51. Timer 2 is a 16-bit timer/counter that  is configured and controlled by the T2CON register. Like Timers 0 and 1, Timer 2  can operate as either an external event counter or as an internal timer, depending on the setting of bit C/T2 in T2CON. Timer 2 has three operating modes: capture, auto-reload, and baud rate generator. The clock speed at capture or auto-reload mode is the same as that of Timers 0 and 1.

Two additional external interrupts, INT2 and INT3 , whose functions are similar to those of external interrupt 0 and 1 in the standard 80C52. The functions/status of these interrupts are determined/shown by the bits in the XICON (External Interrupt Control) register. The XICON register is bit-addressable but is not a standard register in the standard 80C52. Its address is at 0C0H before Break Winbond W78E378 MCU Flash Memory.

To set/clear bits in the XICON register, one can use the “SETB ( CLR ) bit” instruction. For example, “SETB 0C2H” sets the EX2 bit of XICON.

PX3:      External interrupt 3 priority high if set EX3:         External interrupt 3 enable if set

IE3:        If IT3 = 1, IE3 is set/cleared automatically by hardware when interrupt is detected/serviced IT3:         External interrupt 3 is falling-edge/low-level triggered when this bit is set/cleared by software PX2:         External interrupt 2 priority high if set

EX2:      External interrupt 2 enable if set

IE2: If IT2 = 1, IE2 is set/cleared automatically by hardware when interrupt is detected/serviced IT2: External interrupt 2 is falling-edge/low-level triggered when this bit is set/cleared by software.

XICON – external interrupt control (C0H)